X-ray Absorption Near Edge Structures of Silicon Nitride Thin Film by Pulsed Laser Deposition

Abstract

Silicon nitride thin film was fabricated by pulsed laser deposition using KrF excimer laser and a silicon nitride compact as a target. The deposition was carried out on Al₂O₃ (0001) at 1173 K in N₂ gas pressure of 0.27 Pa. The X-ray diffraction did not provide any structural information of the deposited thin films except that it is composed of amorphous and/or micro-crystalline structure. X-ray absorption near edge structures at Si-K edge revealed that local arrangement of Si is not random. It should be composed of SiN₄ unit similar to the case of α-Si₃N₄ crystal. Metallic Si component cannot be found in XANES.