X-ray Absorption Near Edge Structures of Silicon Nitride Thin Film by Pulsed Laser Deposition

Takeo Suga; Teruyasu Mizoguchi; Masahiro Kunisu; Kazuyoshi Tatsumi; Tomoyuki Yamamoto; Isao Tanaka; Toshimori Sekine

doi:10.2320/matertrans.45.2039

Takeo Suga, Teruyasu Mizoguchi, Masahiro Kunisu, Kazuyoshi Tatsumi, Tomoyuki Yamamoto, Isao Tanaka, Toshimori Sekine

著者情報

キーワード: pulsed laser deposition, silicon nitride, x-ray absorption near edge structure

ジャーナルフリー

2004 年 45 巻 7 号 p. 2039-2041

DOI https://doi.org/10.2320/matertrans.45.2039

詳細

抄録

Silicon nitride thin film was fabricated by pulsed laser deposition using KrF excimer laser and a silicon nitride compact as a target. The deposition was carried out on Al₂O₃ (0001) at 1173 K in N₂ gas pressure of 0.27 Pa. The X-ray diffraction did not provide any structural information of the deposited thin films except that it is composed of amorphous and/or micro-crystalline structure. X-ray absorption near edge structures at Si-K edge revealed that local arrangement of Si is not random. It should be composed of SiN₄ unit similar to the case of α-Si₃N₄ crystal. Metallic Si component cannot be found in XANES.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）