2004 年 45 巻 7 号 p. 2471-2473
Crystallization and phase transformation of amorphous Co0.33Si0.67 thin films prepared by radio frequency magnetron sputtering using CoSi2 alloy target were researched by X-ray diffraction in situ. The results showed that CoSi formed firstly at 250°C and some of the films were still amorphous. The residual amorphous films transformed to CoSi2 at 300°C, CoSi and CoSi2 remained stable at 350—500°C and CoSi transformed to CoSi2 when the temperature was elevated further. The first phase that precipitated from the amorphous Co-Si films was decided by the effective heat of formation of phases and the short-range structure of amorphous films.