Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE

Abstract

Vanadium-doped ZnSe, which is theoretically predicted to induce ferromagnetism above room temperature without carrier doping, was epitaxially grown on (100)GaAs substrate by metal-organic vapor phase epitaxial method in an atmospheric pressure. Vanadium concentration in the film obtained under the condition where the substrate and the vanadocene temperatures are 500 and 140°C, respectively, was 6.0 at% at maximum. The full width at half maximum (FWHM) of the peak diffracted from ZnSe(400) face increased with the increase of a vanadium concentration.