MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Compositional Plane of a New Wide-Gap Solid Solution Semiconductor CaPbSeS and Epitaxial Thin Film Growth of CaSe
Seishi AbeKatashi Masumoto
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2005 Volume 46 Issue 9 Pages 1986-1990

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Abstract

We have systematically investigated the compositional plane of solubility range and lattice constants in Ca1−xPbxSe1−ySy system, and as a first step for preparation of the ternary system, we have also investigated the growth and characterization of the CaSe thin films.
Solubility range and lattice constant of a Ca1−xPbxSe1−ySy system was investigated using powder synthesis under thermal equilibrium condition. A CaSe thin film was grown on a cleaved BaF2(111) substrate by means of a hot-wall epitaxy.
The solubility limit at 1273 K varies with respect to the Se concentration y, taking a minimum limit of 0.04 at y=0.8 and a maximum of 0.24 at y=0. It is found that the system can be lattice-matched to PbS and InP. The CaSe thin films are grown epitaxially at substrate temperature range between 673 and 873 K. The energy band gap of the film is estimated to be 4.62 eV at RT through measurement of transmittance and reflectance of the film, having full-width at half-maximum (FWHM) of X-ray rocking curve of 0.08° by ω–2θ scan at (222) Bragg reflection.

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© 2005 The Japan Institute of Metals and Materials
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