Abstract
At interconnection between a Ag-base conductor alloy and a Sn-base solder alloy, fast penetration of Sn into the conductor alloy occurs due to diffusion induced recrystallization (DIR) during solid-state heating under usual energization conditions. Like formation of binary Ag–Sn compounds, the penetration of Sn deteriorates the electrical conductivity at the interconnection. In order to examine the penetration rate of Sn into the conductor alloy, the kinetics of DIR in the Ag(Sn) system was experimentally observed in the present study. The experiment was carried out using Sn/Ag/Sn diffusion couples prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed at temperatures of T=433–473 K for various times up to t=1100 h in an oil bath with silicone oil. Due to annealing, a region alloyed with Sn is formed in Ag due to DIR at T=453 and 473 K. At T=433 K, however, the DIR region could not be recognized clearly. The concentration of Sn in the DIR region is about half of the solubility of Sn in Ag. The mean thickness l of the DIR region reaches to 4 μm for t=1100 h at T=453 K and 5 μm for t=890 h at T=473 K. The experimental results were theoretically analyzed using mathematical models. The analysis indicates that the growth of the DIR region is controlled by the interface reaction at the moving boundary of the DIR region within the experimental annealing times. At longer annealing times, however, the interface reaction is no longer the bottleneck for migration of the moving boundary and the grain boundary diffusion across the DIR region governs the growth of the DIR region.
