抄録
The effect of intermediate temperature oxidation on fatigue behavior of SiC/SiC is investigated to understand fatigue damage mechanisms. It has been found that fatigue life is decreased by 13% after oxidation at 600°C for 100 hours due to disappearance of carbon interphase by oxidation. The strong bonding between the fibers and matrix caused by SiO2 formation at 800°C for 100 hours leads to the shortest fatigue life.
