Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Numerical Analysis of Thermoelectric Properties of Bi88Sb12 by the Multi-Carrier Model
Shigetoshi SotaToshiyasu KodamaMasaki ItohHiroyuki NoguchiHiroyuki KitagawaKazuhiro HasezakiYasutoshi Noda
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2006 Volume 47 Issue 8 Pages 2068-2071


The large thermopower maximum observed for the bismuth antimony (Bi88Sb12) alloy as a function of temperature, is studied based on the multi-carrier model using the Boltzmann transport theory and Fermi integration. The chemical potential of this system has been initially calculated at each temperature from the observed Hall coefficient data. It was observed that the calculated chemical potential remains close to the bottom of the conduction band at low temperatures, and then increases at T=70 K, where the thermopower maximum is observed. The calculation also showed a similar maximum at this temperature. From the calculated results, the temperature dependence of the thermopower is associated with the extrinsic-to-intrinsic transition, and thus the Bi88Sb12 alloy is recognized as a strongly degenerate semiconductor.

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© 2006 The Japan Institute of Metals and Materials
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