2007 Volume 48 Issue 3 Pages 531-537
Thin Au film was prepared by sputtering and evaporation methods with a quartz substrate, followed by microwave irradiation in air (frequency of microwave: 2.45 GHz, incident flux of microwave: 563 W, irradiation time: 600 s). As a result, it was confirmed that microwave heating of thin Au film is feasible. The growth of crystalline and particles due to microwave heating was confirmed from AFM observation and XRD analysis.
Thin Au film is continuously heated during microwave irradiation, regardless of a preparation method of thin film. Microwave heating depends on the amount of microwave absorption on a thin Au film, which is related to the thickness and microstructure of the thin Au film. The rate of temperature rise depends on the ratio of a thickness to resistivity of thin Au film.
