MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Thermoelectric Properties of La-Doped BaSi2
Kohsuke HashimotoKen KurosakiHiroaki MutaShinsuke Yamanaka
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2008 Volume 49 Issue 8 Pages 1737-1740

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Abstract
The authors tried to enhance the thermoelectric figure of merit of BaSi2 by doping La. Polycrystalline samples of La-doped BaSi2: Ba1−xLaxSi2 (0≤x≤0.08) were prepared and characterized. The effect of La-doping was investigated by measuring the thermoelectric properties above room temperature to 973 K. La could dissolve in BaSi2 up to around x=0.03, while LaSi2 appeared as the second phase in the higher x range. Both the electrical resistivity and thermal conductivity of the La-doped samples were lower than those of the non-doped BaSi2. Ba1−xLaxSi2 (x=0.02) indicated the largest power factor and dimensionless figure of merit (ZT). The ZT value was 0.07 at 970 K, which was approximately 7 times larger than that of non-doped BaSi2.
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© 2008 The Thermoelectrics Society of Japan
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