Abstract
In order to improve the oxidation resistance of WSi2 at 873–1473 K, B added WSi2 was fabricated by a spark plasma sintering method and oxidation tests were carried out in air. The fabricated B added WSi2 consists of WSi2, Si and W2B5. The addition of B into WSi2 leads to the formation of a protective borosilicate scale, resulting in improvement of the oxidation resistance. Requisite concentration of B for the formation of a protective borosilicate scale decreases as the temperature is raised. Consequently, the addition of 2 or 3 mass% B is the most effective for improvement of the oxidation resistance of WSi2 in the temperature range of 873–1473 K. Such effect of B on high-temperature oxidation of WSi2 is also discussed.
