Effect of Electron-Beam Irradiation on Impact Value of Silica Glass

抄録

The effect of electron-beam (EB) irradiation on the impact value of silica glass was studied by means of a standard Charpy impact test. When it performed in short bursts to maintain a low temperature, EB irradiation at a dosage of less than 0.216 MGy increased the impact value of the glass. Because the EB irradiation generated dangling bonds in the silica glass, partial relaxation of residual strain probably occured around these dangling bonds in the network structure. If this relaxation resulted in optimization of the interatomic distance of the silicon–oxygen pairs to minimize the potential energy, it would increase the bonding energy of the network structure. The increased impact value was therefore mainly due to an increase in the bonding energy for the silicon–oxygen atomic pairs in the atomic network structure, as well as to the relaxation of the network structure.