MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanopillar Thin Films Prepared by Sol-Gel Method
K. J. ChenF. Y. HungS. J. ChangS. J. Young
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2009 Volume 50 Issue 4 Pages 922-925

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Abstract

ZnO thin films were prepared on a quartz substrate by sol-gel method and a UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact with 30 nm IrO2 electrodes. The ZnO thin films were crystallized at various crystallized temperature (600∼700°C) for 1 hour in pure oxygen atmosphere, and were then analyzed by X-ray diffraction (XRD) and the scanning electron microscopy (SEM) to investigate the thin film crystallized structures. From photoluminescence (PL) and I-V measurement, the 650°C thin film not only possessed a better crystallization but also had nanopillar structures that revealed an excellent characteristic of UV photodetector.

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© 2009 The Japan Institute of Metals and Materials
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