Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
High-Temperature Thermoelectric Measurement of B-Doped SiGe and Si Thin Films
Woosuck ShinMasahiko IshikawaMaiko NishiboriNoriya IzuToshio ItohIchiro Matsubara
Author information

2009 Volume 50 Issue 7 Pages 1596-1602


Recent progress of thin-film type thermoelectric, TE, materials accelerates new microdevices working at room temperature to high temperature, and also requires the measurement techniques for the films. Modified four point pressure contact electrodes have been developed in this study, applied for the high temperature measurement of the resistivity and Seebeck coefficient of the boron-doped Si0.8Ge0.2 and Si thin films. The films were prepared by chemical vapor deposition method and then annealed at high temperature of 1050°C, and their Seebeck coefficients were investigated with two different measurement systems, block heating or air cooling electrodes, from 80 to 780°C. For this temperature range, the Seebeck coefficients of the boron-doped Si0.8Ge0.2 film and boron-doped Si film were 150∼350 μV/K and 100∼250 μV/K, respectively. The deviation of Seebeck coefficient was investigated with various measurement parameter, and the optimized temperature difference for the reliable measurement was found to be 2.2°C.

Information related to the author
© 2009 The Thermoelectrics Society of Japan
Previous article Next article