Microstructures and the Charge-Discharge Characteristics of Advanced Al-Si Thin Film Materials

Abstract

In this study, radio frequency magnetron sputtering was used to prepare Al-Si film negative electrodes and the effect of pre-sputtered Al thin film on the charge-discharge capacity characteristics are discussed. The pre-sputtered 40 nm Al thin film not only reduced the resistivity of the composite negative electrode film, but also prevented peeling between the Al-Si films and Cu foils. In addition, annealing in the vacuum led to an improvement on the index of crystalline (IOC) of the negative electrode matrix and enhanced the diffusion of the pre-sputtered Al film. The annealed Al-Si film with diffused Al film saw an enhancement in the bonding characteristics at the interface stability and the charge-discharge cycling life at high temperature (55°C).