MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Instantaneous and Complete Decomposition of Formaldehyde by Thermally Activated Oxide Semiconductors
Hideki ShimaHiroo TakahashiHiroyuki MiyauchiJin Mizuguchi
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2011 Volume 52 Issue 7 Pages 1489-1491

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Abstract

The extensive use of resin-bonded wood in construction as well as the continued expanding application of formaldehyde-based resins has resulted in formaldehyde (FA) becoming a major indoor contaminant. In this investigation, instantaneous and complete decomposition of FA has been studied by thermally activated semiconductors whose system had previously been developed by us. Complete decomposition has been achieved with Cr2O3 at about 500°C for FA concentrations of 100 and 1200 ppm with a residence time of about 20 ms. Our system is simple in structure and compact; nevertheless, quite efficient.

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© 2011 The Japan Institute of Metals and Materials
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