Abstract
Formation of through-silicon-via (TSV) was examined by pressure infiltration of molten Sn into Si via-holes with variations of the infiltration pressure, infiltration time and via-hole size. Contrary to the conventional Cu TSV process which requires complicate and long Cu electroplating, the method using pressure infiltration of molten Sn is fast enough to complete via-filling within 5 s regardless of the via-hole size. The ratio of the unfilled volume to the initial volume of a via-hole versus the external infiltration pressure well satisfied the Boyle’s law. TSVs of different diameters in a wide range of 10–200 µm could be easily formed at once by infiltration of molten Sn at an external pressure of 4 MPa for 5 s.
