MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
Formation and Evolution of Misoriented Grains in a-Plane Oriented Gallium Nitride Layers
Yuki TokumotoHyun-Jae LeeYutaka OhnoTakafumi YaoIchiro Yonenaga
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2012 Volume 53 Issue 11 Pages 1881-1884

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Abstract

Annealed low-temperature GaN layers grown on r-plane sapphire substrates were examined by X-ray diffraction pole figure measurements. The GaN layers were mainly a-plane oriented, in which misoriented grains with four different orientations were detected. The c-axes of the misoriented grains are tilted from the surface normal by about 35°, which are along the bonds not parallel to the c-axis of the a-plane oriented layers. There was a difference among the peak intensities corresponding to the c-planes of the misoriented grains with the four different orientations. Considering the difference, the relative amount of misoriented grains with each orientation can be predicted. The evolution of the misoriented grains is expected to be controlled by the major polarity.

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© 2012 The Japan Institute of Metals and Materials
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