MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
Electronic Structures and Thermoelectric Properties of Sb-Doped Type-VIII Clathrate Ba8Ga16Sn30
Yasushi KonoKoji AkaiNobuyuki OhyaYuhta SaigaKoichiro SuekuniToshiro TakabatakeSetsuo Yamamoto
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2012 Volume 53 Issue 4 Pages 636-640

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Abstract

The type-VIII clathrate Ba8Ga16Sn30 shows a high figure of merit (ZT) in the middle temperature range 470–670 K. ZT enhancement through Sb doping has recently been reported in p-type Ba8Ga16Sn30. In this study, calculations to determine the electronic structures and thermoelectric properties of Sb-doped Ba8Ga16Sn30 are performed using the WIEN2k code. The energy derivative of density of states [∂ρ(ε)/∂εε=EF for valence band is lower in the Sb-doped Ba8Ga16Sn30 than in non-Sb-doped one, though the density of states [ρ(ε)]ε=EF of both system are almost the same as that for Ba8Ga16Sn30. Except for the signs, the calculated Seebeck coefficients for the p- and n-type Sb-doped and non-Sb-doped Ba8Ga16Sn30 are similar.

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© 2012 The Thermoelectrics Society of Japan
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