Microstructural Characteristics of InGaZnO Thin Film Using an Electrical Current Method

Yen-Ting Chen; Fei-Yi Hung; Shoou-Jinn Chang; Truan-Sheng Lui; Li-Hui Chen

doi:10.2320/matertrans.M2011312

Yen-Ting Chen, Fei-Yi Hung, Shoou-Jinn Chang, Truan-Sheng Lui, Li-Hui Chen

著者情報

キーワード: InGaZnO, crystallization, electric current induced crystallization (EIC), electrical resistance

ジャーナルフリー

2012 年 53 巻 4 号 p. 733-738

DOI https://doi.org/10.2320/matertrans.M2011312

詳細

抄録

This research studied the microstructural characteristics and electronic properties of IGZO1114 films (atomic ratio In : Ga : Zn : O = 1 : 1 : 1 : 4) with different annealing conditions. The solid-state electrical current method was used in the IGZO/In films (In layer was a channel) and the interface effect on the electrical current mechanism was discussed. The experimental results show the effect of the annealing temperature was larger than that of the deposition oxygen flow rate for the film resistances. IGZO film which was annealed at 575 K was able to stabilize the composition of the matrix. The electrical current experiment at room temperature confirmed that the diffusion of the IGZO/In film occurred through an electric current induced crystallization (EIC). The In layer not only assisted the recrystallization behavior of the IGZO film, but also improved the electrical resistance.

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