MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
Temperature and Bias Voltage Dependencies of Spin Injection Signals for Co2FeAl0.5Si0.5/n-GaAs Schottky Tunnel Junction
Tatsuya SaitoNobuki TezukaSatoshi Sugimoto
Author information
JOURNALS FREE ACCESS

2012 Volume 53 Issue 4 Pages 641-644

Details
Abstract

We investigated the temperature and bias voltage dependencies of spin injection signals for Co2FeAl0.5Si0.5 (CFAS)/n-GaAs schottky tunnel junction. Clear voltage change was observed at 10 K for the junction by 3 Terminal Hanle measurements. The maximum voltage change, ΔVMAX, was decreased with increasing temperature and observed up to 100 K. The estimated spin relaxation time, τ, was 290 ps at 10 K and was also decreased with increasing temperature. In addition, temperature dependency of τ was lower than that of ΔVMAX. The ΔVMAX was increased with increasing bias voltage, and the sign of ΔVMAX was reversed by opposite bias voltage direction. Moreover, bias dependency of ΔVMAX became insensitive with increasing temperature.

Information related to the author
© 2012 The Japan Institute of Metals and Materials
Previous article Next article
feedback
Top