MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
Growth of Cu(In,Ga)Se2 Films Selenized Using Dimethylselenium
Masahiro TahashiKenji IinumaHideo GotoKenji YoshinoMakoto TakahashiToshiyuki Ido
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2012 Volume 53 Issue 6 Pages 1169-1171

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Abstract

Cu(In,Ga)Se2 (CIGS) films were prepared by thermal treatment of In/CuGa metallic precursors using dimethylselenium, which is a less hazardous Se source than H2Se gas. CIGS films were fabricated using various heating times and dimethylselenium supply rates. We investigated the effect of the selenization temperature and the dimethylselenium supply rate on the crystal phase and surface morphology of the films. It was demonstrated that deimethylseleniumt is effective in preparation of the CIGS films as the alternative material of H2Se.

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© 2012 The Japan Institute of Metals and Materials
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