MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
 
Electronic Transports for Thermoelectric Applications on IV–VI Semiconductors
Akihiro IshidaYutaro SugiyamaHirokazu TatsuokaTomoki ArigaMikio KoyanoSadao Takaoka
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2012 Volume 53 Issue 7 Pages 1226-1233

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Abstract

Seebeck effect, Peltier effect, Thomson effect, electronic thermal conductivity, Hall effect, and Nernst effect are described on the basis of electronic conduction theory, taking account of effective mass anisotropy, nonparabolicity in Ek relation, and temperature dependent band gap. It is shown that the temperature dependence of the band gap does not modify the basic equations for the Seebeck coefficient, thermal conductivity, and Nernst coefficient. In narrow gap semiconductors, existence of minority carriers significantly enhances the electronic thermal conductivity, owing to the multiple carrier transport known as bipolar diffusion. Calibration coefficient γ for the Hall effect (RH = - γ /en) is increased by nonparabolicity in the Ek relation. Nernst coefficient gives useful information on scattering properties of the materials.

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© 2012 The Thermoelectrics Society of Japan
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