MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Microstructure and Local Density of States of Ruthenium Silicide on Si(001) Surface
K. ShudoS. OhnoM. ToramaruN. KobayashiY. MiyamotoN. Kawamura
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2012 Volume 53 Issue 9 Pages 1582-1585

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Abstract

Using scanning tunneling microscopy, we observed the formation process of ruthenium silicide on a monolayer Ru-deposited Si(001) surfaces at high temperature. Ruthenium silicide islands of nanometer scale are formed after heating to 1400 K. They tend to be aligned in the [110] and [1\bar{1}0] directions. Locally observed spectroscopic results were compared with other spectral data. Large islands showed compositional inhomogeneity, with a widened band gap near the interface with the Si substrate, suggesting that growth of the islands occurs due to incorporation of Si atoms from the edges of nearby steps.

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© 2012 The Japan Institute of Metals and Materials
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