抄録
Using scanning tunneling microscopy, we observed the formation process of ruthenium silicide on a monolayer Ru-deposited Si(001) surfaces at high temperature. Ruthenium silicide islands of nanometer scale are formed after heating to 1400 K. They tend to be aligned in the [110] and [1\bar{1}0] directions. Locally observed spectroscopic results were compared with other spectral data. Large islands showed compositional inhomogeneity, with a widened band gap near the interface with the Si substrate, suggesting that growth of the islands occurs due to incorporation of Si atoms from the edges of nearby steps.
