Online ISSN : 1347-5320
Print ISSN : 1345-9678
Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer
Zagarzusem KhurelbaatarKyu-Hwan ShimJaehee ChoHyobong HongV. Rajagopal ReddyChel-Jong Choi
Author information

2015 Volume 56 Issue 1 Pages 10-16


The temperature dependence of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of an Au/n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height (ΦB), ideality factor (n), saturation current (I0), doping concentration (ND), and series resistance (Rs), were obtained as a function of temperature. The Richardson constant (A**) obtained from the In(Io/T2) versus 1000/T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height (\barΦ bo) and standard deviation (σ0) calculated using the apparent Schottky barrier height (Φap) versus 1/2kT plot were 1.26 eV and 0.15 eV, respectively. From a fit of the modified Richardson plot of ln(I0/T2) − (qσ)2/2(kT)2 versus 1000/T, the A** was extracted as 134 A/cm2 K2, which was close to the theoretical value of the n-Si. The interface state densities obtained from the Au/PEDOT:PSS/n-Si SBD decreased with increasing temperature. Furthermore, the conduction mechanism dominating the reverse-bias leakage current in Au/PEDOT:PSS/n-Si SBD was described and discussed.

Information related to the author
© 2014 The Japan Institute of Metals and Materials
Previous article Next article