抄録
Indium-tin-oxide (ITO) thin films, typically produced by In2O3-10 mass%SnO2 target, are widely used for the elaboration of optoelectronics devices such as liquid crystal displays (LCD), flat panel displays (FPD), plasma displays, touch panels, etc., and they are required to satisfied specific optoelectronical properties such as, low volume resistivity and high transmittance.
Due to the current high cost and limited supply of indium, titanium was investigated as dopant element for the production of ITO thin films. Two sputtering method were carried out; a combinatorial method where an In2O3-10 mass%SnO2 and a Ti targets were simultaneously sputtered and then a co-sputtering method where, in addition to the previous targets, an In2O3-50 mass%SnO2 and a TiO2 targets were also sputtered.
Effects of the oxygen flow and heat treatment temperature on the optoelectronical properties of ITO thin films doped with Ti, as metal and dioxide, were investigated and the results were discussed on the basis of crystallization for bixbyte structure of In2O3. The obtained results indicate that the use of Ti as dopant element during the production of ITO thin films by sputtering method will be promising.
