抄録
This article discusses means for investigating and understanding the stability or reactivity at interfaces important in semiconductor processing. It is shown that high-resolution electron microscopy is capable of, and indeed essential to, phase identification at the nano-scale level. The interpretation of interfacial stability can be based on a phase diagram approach. However, as the number of elements involved at a single interface increases, then higher order phase diagrams are required. A method for deriving such diagrams is described and examples to illustrate their application are given. Emphasis in this paper is placed on metal-silicon based systems particularly Ti–Si, Ti–Si–O, Ti–Si–N and Ti–Si–O–N, and related silicide-forming elements.
