抄録
We studied effect of magnetoelastic anisotropy and role of defects on domain wall (DW) dynamics and remagnetization process of magnetically-bistable microwires. We manipulated the magnetoelastic anisotropy changing the ratio between the metallic nucleus diameter and glass coating thickness and applying the tensile stresses. Application of stresses resulted in increase of the switching field and decrease of the DW velocity, v. The role of defects existing in magnetically bistable microwires is related with nucleation of new reversed domains. Abrupt jumps on v(H) dependences correlate with defects existing in microwires. Annealing allows considerably increase DW velocity, enhances the magnetic field range of single DW propagation regime and domain wall mobility.
