[Paper] Simulation Analysis of a Backside-illuminated Multi-collection-gate Image Sensor

抄録

The authors have developed an ultra-high-speed video camera with in-pixel storage and backside illuminated structure, which was named "Backside Illuminated In-situ Storage Image Sensor (BSI ISIS)". In order to achieve much higher frame-rate, a multi-collection-gate structure was proposed toward one giga frames per second. Based on this structure, an example pixel design of "Nanosecond-resolution image sensor (NanoSIS)" is reported. Each pixel has six collection gates, and an image sensor with this pixel design can be applied for a multi-framing camera. The travel time to an appropriate collection gate is less than 1 ns for electrons generated in the most part of a pixel except the area close to the pixel boundary. Through results of device simulation, this paper describes preliminary analysis of the performance and possible modification of the design toward sub-nanosecond temporal resolution.