光センサ応用にむけた狭帯域有機光電変換デバイス

抄録

Printed organic photoelectric conversion devices have attracted considerable attention in recent years due to their advantages, such as potential flexibility, large-area detection, and so forth, over their inorganic counterparts. In general, narrowband applications such as industrial colorimetric measurements, and spectral biological imaging, typically use broadband photodetectors combined with additional color filters. This paper discusses the effect of device structure to realize narrow-light detection devices. Bulk heterojunction (BHJ) devices with large donor (D)/acceptor (A) interface areas exhibit a relatively high external quantum efficiency (IPCE). For BHJ devices, one of the most important factors to realize narrowband light detection is the control of charge carrier collection efficiency at the electrodes, which is attributed to the device structure, including the intrachain transport in polymers. Highly responsive polymer near-infrared devices with BHJ structures have been developed by utilizing the weak sub-bandgap absorption owing to the interface between D/A materials. We can select the absorption wavelength of the OPDs by choosing organic materials with suitable absorption wavelengths. A red-detection inverted-structure organic position sensor has also been developed using ZnO:Al as the solution-processed surface resistive layer.