2023 年 60 巻 4 号 p. 251-256
CuNi resistive film was formed by screen printing on four types of ceramic substrates with different coefficient of thermal expansion, and the effect of thermal expansion coefficient and cooling rate on resistivity was investigated. The investigation revealed that the resistivity of the resistive film increases as the difference between the coefficient of thermal expansion of the resistive film and that of the substrate becomes greater. In addition, faster the cooling rate in the film forming process is, higher the resistivity is. It is assumed that these changes are caused by changes in the microphysical structure and crystal structure of the resistive film that is provoked by the tension applied by the substrate during the cooling process of the resistive film. Regarding the change in the resistivity of the resistor film, the relationship between the film thickness reduction rate of pre- and post- firing and the change in the lattice constant obtained by XRD analysis was examined. The result demonstrated that the change in resistivity has correlation with the change in film thickness reduction rate and lattice constant. The relationship between the amount of changes in the film thickness reduction rate and the lattice constant with respect to the amount of change in resistivity suggests that the change in resistivity is mostly due to the change in the microphysical structure, and the effect of the change in the crystal structure is negligible.