1.3-μm GaInAsP/InP Multi-Quantum-Well Surface-Emitting Lasers

Seiji UCHIYAMA; Takao NINOMIYA

doi:10.1007/s10043-996-0059-9

Seiji UCHIYAMA, Takao NINOMIYA

著者情報

キーワード: surface emitting laser, multi-quantum well, low threshold current, buried heterostructure, Si/Al₂O₃, GaInAsP/InP

ジャーナルフリー

1996 年 3 巻 2 号 p. 59-61

DOI https://doi.org/10.1007/s10043-996-0059-9

詳細

抄録

A multi-quantum-well (MQW) active layer has been introduced to 1.3-μm GaInAsP/InP surface-emitting (SE) lasers. Room temperature pulsed operation of a 1.3-μm MQW SE laser was obtained for the first time and its threshold current was 15 mA. CW (continuous wave) operation up to 7°C (threshold current I_th=7.6 mA at 7°C) was achieved.

責任著者(Corresponding author)

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