抄録
Dry etching is an important tool to fabricate various semiconductor photonic devices. The roughness of etched sidewalls should be avoided as it reduces the scattering loss. We present a spatial frequency analysis of the sidewall roughness of dry etched facets processed by reactive ion etching. A characteristic parameter corresponding to a correlation length is estimated to be ~0.5 μm. In addition, its effect on reflectivities of etched reflectors is discussed.
