2004 Volume 73 Issue 3 Pages 339-345
Metal/insulator/semiconductor field-effect transistors based on a surface p-type conductive layer of hydrogen‐terminated diamond exhibits a transconductance of more than 100mS/mm and a cutoff frequency (fT) of 20 GHz. By the reachable reduction of parasitic factors such as source resistance, gate resistance, and substrate capacitance, the fT and the maximum frequency of oscillation are expected to be 40 GHz and 100 GHz, respectively, in the 0.2 mu m gate FET. Carrier transport characteristics have been mainly estimated by fT at different applied electric fields and different gate lengths. The channel conductance is about 200 cm2/Vsec and the mean carrier velocity is 5x106cm/sec which is one half of the saturated velocity has been obtained. A new type of interfacial control technology which diminishes the scattering centers at the surface and enhances the channel mobility as high as the bulk mobility is highly desired.
