Tips for semiconductor process simulation

Abstract

In the dry processes of semiconductors, the active species produced in the gas phase are transported and react on the wafer surface. The reaction size varies from centimeter to meter in the gas phase, from millimeter to centimeter in the transport region near the wafer, and from nanometer to millimeter range on the wafer surface. Multiscale simulation is suitable for the calculation of such different-size phenomena. In the multiscale simulation, the gas reaction model, the transport model, and the surface reaction model are combined. In addition to explaining the outline of the calculation method, the multiscale simulation for oxide film in dry etching process is shown.