抄録
A composit junction model is presented for theorizing the characteristics of p-n junction. The model has regions of graded and uniform distributions of impurity, thereby the parameters concerned are the concentration gradient a and the resistivity ρ of the materials. Observed values of the breakdown voltage VB and the barrier capacitance Cr of silicon p-n junctions of varying a and ρ (ρn_??_0.1_??_20 Ωcm) are found in good agreement with the values that are expected from the theory derived from the model. The deviation from the theory of well known simple model is successfully explained especially in the higher resistivity region. For a given resistivity, Vii increases gradually with the depth of diffusion Xj at first, then varies with its square root above the critical value of Xj as predicted by the author's theory. Further, for given a and ρ, CT decreases with the third root of the voltage at low reverse voltages applied, and at high reverse voltages, it decreases as though a much higher voltage had been applied, varying nearly in accordance with the square root law similar to She case of an abrupt junction.
