フローティング・ゾーン法で生成したシリコン単結晶中の転位
1962 年 31 巻 1 号 p. 37-45
詳細
1962 年 31 巻 1 号 p. 37-45
Dislocation of silicon single crystals grown by the floating zone method is examined by the copper decoration technique and X-ray Borrmann's method. The crystals used are those made by the authors, by du Pont Co. and by Siemens Co. Ltd. All these crystals have similar patterns of dislocation with dislocation densities of (1_??_4)×104/cm2.
Interface between solid and melt during the crystal growth is observed by p-n junction method. Relations of the shape of interface to growth condition and crystal imperfection are investigated by varying the growth condition.
Temperature distribution in crystal ingot is dealt with as a problem of heat conduction in a cylinder, and the calculation is carried out by Liebmann's method with the aid of an IBM 650. In the calculation, heat dissipation at the surface is assumed to follow Stefan-Boltzmann's law and temperature dependence of thermal conductivity of the crystal material is taken into consideration. Agreement between calculated and observed results is fairly satisfactory.
