抄録
Amount of content and distribution of oxygen in silicon crystals grown by pulling-up from silica crucible are studeid by infrared absorption technique to elucidate the intermixing mechanism of oxygen.
By varying the pulling-up condition, the following results are obtained.
1) Oxygen density in silicon increases with increasing speed of rotation of the crystal during growth.
2) Slender crystals pulled-up from a large crucible have a small oxygen content.
3) Distribution of oxygen along the pulling direction is similar to that found when other im-purities of the segregation constant of smaller than unity are intermixed.
4) Distribution of oxygen, lateral to the pulling direction, is nearly uniform.
The above shows that the oxygen comes into the crystal by agitation of silicon melt caused by convection and rotation of the crystal during growth rather than diffusion from crucible walls.
Some of the above results were already reported by Hrostowski et al. In the present work, the intermixing mechanism of oxygen, the relation of oxygen distribution to crystal form, and the way the oxygen content increases in the crystal are dealt with.
