メサ型トランジスタに対する再拡散法の考察

抄録

The double-diffusion problem is solved both analytically and numerically. The analytic solution for the problem with surface rate limitation as the boundary condition is obtained by the use of Green's function. Impurity distribution profiles are presented graphically with evaporation rate constant as a parameter. It is suggested that the double-diffusion process is effective for the purpose of improving the high frequency characteristics of mesa-transistors. When all the other electrical parameters are set equal, base resistance becomes lower in the case of double-diffusion process than in the case of single-diffusion one. The method to evaluate quantitatively the degree of improvement is given and the numerical results are shown graphically.