Pauwの方法による半導体気相成長膜の電気的特性の測定

抄録

Pauw has proposed a new method for measuring the resistivity and Hall coefficient of a thin wafer of semiconductor. This method is adequate for a vapor-deposited semiconductor film on a substrate if the depletion layer of p-n junction acts as an insulator between the film and substrate. However the depletion layer is not strictly an insulator, hence, the effect of substrate can not be neglected when the conductance of film is fairly low and the lifetime of minority carriers in the film or substrate is rather short.
A proposed way of coping with this case is that the resultant conductances and Hall voltages of the film and substrate be successively measured by Pauw's method as one after another thin layer parallel to the surface is removed from the substrate, and the resultant conductance and a quantity containing Hall voltage be plotted as functions of the thickness of substrate. The resistivity and Hall coefficient of the film can then be evaluated by extrapolating these curves to zero-thickness. This procedure has many advantages because the deposited film may be used for various devices.