FETを用いた蓄積型計数回路
1967 年 36 巻 12 号 p. 982-987
詳細
1967 年 36 巻 12 号 p. 982-987
The characteristics, a modification, and uses of a transistorized storage counter are described. The circuit uses a MOS type FET as a memory voltage reading element. The memory voltage decay rate is better than -0.1%/min. at 30°C, 63% R.H. Because of its simple, compact, and light weight feature, the circuit will have many uses in nuclear instrumentations.
By a modification of the pumping circuit of the storage counter, it can also serves as a pulse integrator for radiation dosimetry.
A simple 15 channel pulse height analyzer utilizing the storage counters as memory devices has been constructed.
