シリコン・絶縁物系の諸問題

抄録

This paper reviews various aspects of Si-insulator systems, especially Si-SiO₂ and Si-Si₃N₄ system which are used in integrated circuits and other applications, from the following viewpoints, namely (1) what kind of characteristics are specified to Si-insulator systems, (2) what are the physical or chemical processes corresponding to the specifications, (3) to what extent each process is understood, and (4) how useful our understandings to the processes are in order to realize the requested characteristics of Si-insulator systems. Specifications to Si-insulator systems are classi-fied to two categories based on whether they are depending on the microscopic properties, or not. A list of insulators, which are expected to be useful is shown. Furthermore, manufacturing methods of insulator film are classified and discussed. Characteristics and structures of insulator films, and electronic properties of the interface between Si and insulator are also discussed.