SiCl4のH2還元によるサファイヤ上のSiのepitaxial成長
1968 年 37 巻 6 号 p. 496-504
詳細
1968 年 37 巻 6 号 p. 496-504
Central Research Laboratory, Hitachi, Ltd. Epitaxial films of silicon have been grown on sapphire substrates by the hydrogen reduction of SiCl4. The structure of silicon films and deposition rate were shown as a function of a mole fraction of SiCl4 in hydrogen and as a function of substrate temperature. The uniformity of orientation in the deposited silicon films-improved as they were made thicker. The linear relation observed be-tween the legarism of the deposition rate and the reciprocal of the substrate temperature yielded an apparent activation energy of about 20 Kcal/mol for growth. The epitaxial relationships between the deposited silicon and sapphire substrate have been established using electron diffraction and X-ray Laue back reflection techniques. It was found that, even on the (0001) and (1123) sapphire which were inclined at an angle of some ten degrees, (111) and (110) silicon, respectively, have been grown parallel. For growth on (1012) sapphire, (110) silicon was parallel to the interface.
