窒化シリコン薄膜の誘電特性
1968 年 37 巻 8 号 p. 711-717
詳細
1968 年 37 巻 8 号 p. 711-717
Silicon nitride films were prepared by reactive sputtering of silicon in a nitrogen supported glow discharge. Some physical and chemical properties of these films were examined in terms of discharge current density. The film properties depend on current density and gas pressure but a current density higher than 3.3 mA/cm2 is found to have a detrimental effect. The dielectric constant is about 8.3, the breakdown voltage is in the range of approximately 7.5×106V/cm to 2.5×107V/cm and temperature coefficient is 23_??_35 ppm/°C. The resultant capacitors which have low dielectric losses and are very stable under life test conditions. It has been shown that these films prepared by a sputtering method can be used effectively as the dielectric in thin films devices.
