高不純物濃度n-SiのESRにおける不純物効果
1969 年 38 巻 3 号 p. 212-218
詳細
1969 年 38 巻 3 号 p. 212-218
The conduction electron spin resonance in P-, As- and Sb-doped Si (impurity concentration: 1.5×1018_??_1.5×1020cm-3) was observed in the temperature range 77°K to 400°K. The g-value of ESR absorption was found to decrease with increasing impurity concentration and temperature. The considerable difference observed in line width for different impurity elements suggests a large contribution of the impurity effect for the relaxation processes. The experimental results were qualitatively explained using the three relaxation processes; namely, relaxation by lattice scattering, by impurity scattering and by spin-orbit coupling to donor impurity.
