化合物Bi2Se3,Bi2Te3およびSb2Te3のゼーベック係数の熱処理効果
1972 年 41 巻 3 号 p. 224-230
詳細
1972 年 41 巻 3 号 p. 224-230
Effects of annealing time and temperature on Seebeck coefficients of Bi2Te3, Bi2Se3 and Sb2Te3 compounds have been investigated. p-type Bi2Te3 compound changes to n-type after a short annealing time at 400°C and 500°C. (for example l hr. at 400°C.) For n-type Bi2Se3 and p-type Sb2Te3 compounds, Seebeck coefficient at the annealing temperature of 400°C is larger than that at 500°C. The formation energy of Schottky defect in Bi2Se3 is estimated to be 0.35 eV. In case of Sb2Te3, the formation energy of the complex defect which derives from Schottky defect and a substitutional atom is estimated to be 0.12 eV.
