非晶質半導体の電気物性
1976 年 45 巻 11 号 p. 1018-1027
詳細
1976 年 45 巻 11 号 p. 1018-1027
Recent developments in electrical properties of amorphous semiconductors have been reviewed. Some experiments on DC and AC conductivities, high-field effect, magnetbresistance, ESR and carrier transport through the junction are given. New models and interpretation for them are introduced. A few methods for the evaluation of Mott's parameters are also discussed.
