“フォトルミネッセンス法によるシリコン結晶の評価”へのコメント

抄録

Photoluminescence measurement is known to be a powerful technique to evaluate silicon crystals. When one determines the impurity concentration quantitatively by measuring luminescence intensities, however, many cau-tions should be paid especially with regard to the kinetics of photo-excited carriers. Here, we show the effect of changing the excitation intensity and of the presence of lattice defects on silicon luminescences.