応用物理
Online ISSN : 2188-2290
Print ISSN : 0369-8009
InSb結晶とその物性
大野 勲夫藤沢 功今村 薫月岡 邦夫春名 勝次宮沢 久雄
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1979 年 48 巻 10 号 p. 924-939

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A review of a familiar III-V compound semiconductor, InSb, is made from two stand-points of view: electronic materials science and solid state physics. First, bulk-material char-acterization, electron mobility at 77K and residual impurities, is briefly discussed to see the present stage of purification and crystal perfection. Second, wafering-processes, thin films, anodic oxidation and ion implantation techniques are reviewed on the basis of our experimental results. Third, negative longitudinal magnetoresistance, magnetophonon resonance, magneto-plasma and magnetic dipole resonances, and two dimensional transport phenomena are disussed in conjunction with crystal preparation conditions. Finally, two new developments in device applications, CID imaging array and SFR laser, are described.

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